Posts Tagged: SemiQ

Silicon carbide is becoming the material of choice for EV power electronics

Silicon carbide is a hot topic in the power electronics field these days. As a recent article in the New York Times explains, SiC is a wide-bandgap (WBG) material that designers are increasingly choosing to make power electronics devices more efficient. WBG advantages The WBG classification has profound implications for device behavior and performance. This… Read more »

SemiQ launches SiC 1,200 V, 80 milliohm MOSFET modules in SOT-227 packages

Semiconductor supplier SemiQ has launched a new generation of its MOSFET modules, which are designed for EVs, power supplies and data centers. The second-generation SiC 1,200 V, 80 milliohm MOSFET module is housed in the SOT-227 package, and is available in a 10 A parallel diode version as well as without a parallel diode. The… Read more »

SemiQ releases 1,200 V 80 mΩ silicon carbide power switch

Semiconductor supplier SemiQ has released its second-generation silicon carbide power switch, a 1,200 V 80 mΩ SiC MOSFET. The company currently sells SiC rectifiers at 650 V, 1,200 V and 1,700 V. The MOSFET is designed to provide a trade-off of conduction and switching losses, and maintain its efficiency advantage over a wide range of… Read more »