“Chip independency is an important and fundamental element of the Danfoss go-to market strategy. By selecting IGBT chips from ON Semiconductor, we are accommodating the high growth expectations from our automotive customers,” said Claus A. Petersen, SVP and GM of Danfoss Silicon Power. “Our main objective is to develop world-class power modules, fitted exactly for the application in question.”
“With investment in power technologies and manufacturing capacity globally, ON Semiconductor reiterates our firm commitment to be the top supplier of automotive high-power devices,” said Asif Jakwani, SVP of the Advance Power Division at ON Semiconductor. “Utilizing our semiconductor portfolio with Danfoss’s extensive experience in power module design and manufacturing, we expect our penetration in the vehicle electrification market to accelerate.”
ON Semiconductor will fabricate the high-power components in East Fishkill, New York and Bucheon, South Korea. Danfoss will fabricate its power modules in Flensburg, Germany and Utica, New York.