Posts Tagged: ROHM

Apollo Future Mobility releases prototype of SiC dual inverter

Apollo Future Mobility Group (AFMG) has announced that its subsidiary, GLM, has successfully completed the first prototype of a SiC Dual Inverter 800 V system for the EV market. The inverter system was co-developed with semiconductor manufacturer ROHM.  The new inverter is equipped with a solid-state battery (SSB) battery management system (BMS), two inverters and… Read more »

ROHM introduces new 4th-generation SiC MOSFETs for EV powertrains

ROHM Semiconductor has announced its 4th-generation 1,200-volt SiC MOSFETs optimized for EV powertrain systems, including the main drive inverter, as well as power supplies for industrial equipment. ROHM says that the new SiC MOSFETs deliver low ON resistance with high-speed switching performance, contributing to greater miniaturization and lower power consumption in a variety of applications,… Read more »

Vitesco and ROHM cooperate on silicon carbide power solutions

EV powertrain supplier Vitesco Technologies and silicon carbide specialist ROHM Semiconductor have signed a development partnership under which Vitesco will use ROHM’s SiC components to increase the efficiency of its EV power electronics.  “Energy efficiency is of paramount importance in an EV. As the traction battery is the only source of energy in the vehicle,… Read more »

ROHM’s new shunt resistors feature novel high heat dissipation structure

Semiconductor manufacturer ROHM has announced new shunt resistors ideal for current detection in motors and power supply circuits used in EVs and industrial equipment. The GMR50 series of resistors deliver 4 W rated power (at electrode temperature TK=90° C) in the compact 5.0 mm × 2.5 mm (2010 type package) size. Shunt resistors are widely… Read more »

ROHM introduces 1,200 V IGBTs for compressors and heater circuits

Electronic parts maker ROHM has announced four new automotive-grade 1,200 V-rated insulated-gate bipolar transistors (IGBTs) for inverters used in electronics compressors and for switching circuits used in positive temperature coefficient (PTC) heaters. The IGBTs feature a short-circuit resistance of 10 μsec (Tj=25° C). ROHM says the devices’ unique structure reduces VCE(sat) to 1.70 V, which… Read more »

ROHM and GaN Systems collaborate to develop GaN semiconductors

Power semiconductor supplier ROHM and gallium nitride (GaN) power semiconductor specialist GaN Systems have partnered to develop new power electronics. Wordy? Yes. Interesting? It GaN be. The partnership will harness GaN’s expertise in power transistors along with ROHM’s established design and manufacturing capabilities in order to create new lines of compatible products. The new products will… Read more »