Power semiconductor supplier ROHM and gallium nitride (GaN) power semiconductor specialist GaN Systems have partnered to develop new power electronics. Wordy? Yes. Interesting? It GaN be. The partnership will harness GaN’s expertise in power transistors along with ROHM’s established design and manufacturing capabilities in order to create new lines of compatible products.
The new products will use gallium nitride dies in packagings from both companies. This will increase the availability and ease of sourcing for GaN devices, especially for Asian markets, which are rapidly growing. Besides packaging, both companies have also agreed to conduct research into new solutions for industrial, automotive, and consumer electronics.
“ROHM has targeted the power device business as one of our growth strategies. We offer leading-edge products such as SiC (Silicon Carbide) power devices and provide power solutions that integrate control technologies, including gate drivers that maximize device performance. We are also developing GaN for next-generation power devices. By leveraging the superior technologies and expertise of both companies, we are able to accelerate the development of high-performance solutions to solve the needs of the power market,” says ROHM Senior Managing Director Katsumi Azuma.