As vehicle electrification increases, so do the requirement for power semiconductors to provide highly efficient power conversion at increasingly higher switching frequency. A move from traditional silicon to wide-band gap, in particular Power GaN FETs, can address the demands of electrification of the powertrain. In this webinar, we will cover how Nexperia addresses one of… Read more »
Nexperia has released its first SiC Schottky diode, which boasts a 650 V repetitive peak reverse voltage and 10 A continuous forward current . Nexperia plans to expand its portfolio of SiC diodes, leading to a total of 72 products operating at voltage levels of 650 V and 1,200 V, with currents in the range… Read more »
Sponsored by TTI MOSFETs are the “go to” device for driving motors, solenoids, and other high-power devices. Whenever you work with MOSFETs, heat is always a concern. When selecting a MOSFET, printed circuit board (PCB) designers must understand how much power they will transfer through the MOSFET and the tolerable temperatures. With that information and… Read more »
Semiconductors have been enjoying an unaccustomed turn in the media spotlight since the recent shortage that forced many automakers to slow or suspend production. The latest news on the semiconductor scene is that Nexperia, an expert in the high-volume production of essential semiconductors, has acquired Newport Wafer Fab, which operates a semiconductor production facility in… Read more »
Nexperia has announced new 0.55 mΩ RDS(on) 40 V power MOSFETs in the LFPAK88 package for automotive (BUK7S0R5-40H) and industrial (PSMNR55-40SSH) applications. The company says the devices are the lowest RDS(on) 40 V parts it has ever produced. They deliver higher power densities than traditional D2PAK devices and offer improved performance in both avalanche and… Read more »
Semiconductor manufacturer Nexperia has announced a partnership with United Automotive Electronic Systems (UAES), a provider of automotive powertrain and body control systems. The program will focus on power systems for EVs, with the aim of jointly developing automotive applications using gallium nitride (GaN) technology. UAES is currently using Nexperia GaN FETs in EV projects such… Read more »
As vehicle electrification increases, so does the requirement of power semiconductors to provide highly efficient power conversion at increasingly higher switching frequency. A move from traditional Si to WBG, in particular Power GaN FETs, coupled with Cu clip-bonded package technology instead of traditional wire bonded D2 and TO packages can address the demands of electrification… Read more »
Nexperia has announced a series of half-bridge (high-side and low-side) automotive MOSFETs constructed in the space-saving LFPAK56D package format. The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications, including motor drives and DC/DC converters. The new package provides a half-bridge solution in one device, and occupies a 30% smaller… Read more »
Nexperia has introduced its 80 V RET (resistor-equipped transistor) family. The company says the new RETs, or “digital transistors,” provide enough headroom for use in 48 V automotive circuits. RETs save space and reduce manufacturing costs by combining the bias resistor and bias-emitter resistor in the same SOT23 (250 mW Ptot) or SOT323 (235 mW… Read more »
Semiconductor manufacturer Nexperia has launched a new AEC-Q101-qualified Repetitive Avalanche Application-Specific FET (ASFET) portfolio focused on powertrain applications. The company says the devices have been tested to 1 billion avalanche cycles, and can be used to control automotive inductive loads such as solenoids and actuators. In addition to providing a faster turn-off time (up to… Read more »