Nexperia has announced a new range of GaN FETs featuring next-generation high-voltage GaN HEMT H2 technology. The devices will be available in both TO-247 and the company’s proprietary CCPAK surface-mount packaging. Nexperia says its devices achieve superior switching FOMs and on-state performance with improved stability, and simplify application designs. Because the parts are configured as… Read more »

Nexperia is offering its automotive power MOSFETs in a new thermally-enhanced, loss-free package with a footprint that it says is 80% smaller than industry-standard devices. LFPAK33 MOSFETs enable the infrastructure that powers contemporary automotive subsystems such as radar and ADAS technology. In the industry, pressure is growing to reduce the size of modules in the… Read more »