Semiconductor manufacturer Nexperia has announced a partnership with United Automotive Electronic Systems (UAES), a provider of automotive powertrain and body control systems. The program will focus on power systems for EVs, with the aim of jointly developing automotive applications using gallium nitride (GaN) technology.
UAES is currently using Nexperia GaN FETs in EV projects such as vehicle-mounted chargers and high-voltage DC-DC converters. Nexperia says its GaN technology supports high switching frequencies and efficient power conversion, and meets automotive AEC-Q101 standards.
Nexperia VP Paul Zhang said, “The power density and efficiency of silicon-based GaN field-effect transistors will play key roles in the electrification of cars. We recognize the broad offering, industry position, and customer base that UAES has in the automotive industry and we believe that our intensified collaboration in GaN will help both companies to deliver more advanced and efficient EV power system solutions to our customers. Earlier this month, we announced an increase in global production and R&D investment to fully support new product development. We intend to expand our investments and jointly to create a laboratory to develop automotive GaN technology applications.”