Nexperia has announced new 0.55 mΩ RDS(on) 40 V power MOSFETs in the LFPAK88 package for automotive (BUK7S0R5-40H) and industrial (PSMNR55-40SSH) applications. The company says the devices are the lowest RDS(on) 40 V parts it has ever produced. They deliver higher power densities than traditional D2PAK devices and offer improved performance in both avalanche and linear mode.
“The new 8×8 mm LFPAK88 MOSFETs combine the latest high-performance superjunction silicon technology with our proven LFPAK copper clip technology, which is renowned for delivering significant electrical and thermal performance benefits,” said Marketing Manager Neil Massey. “The resulting low RDS(on) enables us to pack more silicon in the package, improving power density and shrinking device footprint.”
Measuring 8x8x1.7 mm, the new power MOSFETs also feature linear mode / safe operating area (SOA) characteristics for safe and reliable switching at high current conditions. The SOA at 1 ms and 20 VDS is 35 A; at 10 ms, 20 VDS the SOA is 17 A.
The new MOSFETS are designed to replace two paralleled old-style components with one new LFPAK88, simplifying manufacturing and increasing reliability. The AEC-Q101-qualified BUK7S0R5-40H parts are intended for braking, power steering, reverse battery protection, e-fuse, DC-DC converter and motor control applications. The industrial PSMNR55-40SSH MOSFETs are made for battery isolation, current limitation, e-fuse, motor control, synchronous rectification and load switch applications in power tools, appliances, fans, e-bikes, scooters and wheelchairs.