EV Engineering News

Nexperia’s new silicon carbide Schottky diodes have 650 V peak reverse voltage

Nexperia has released its first SiC Schottky diode, which boasts a 650 V repetitive peak reverse voltage and 10 A continuous forward current . Nexperia plans to expand its portfolio of SiC diodes, leading to a total of 72 products operating at voltage levels of 650 V and 1,200 V, with currents in the range of 6-20 A.

The company is targeting industrial applications including Switch Mode Power Supplies (SMPS), AC-DC and DC-DC converters, battery charging infrastructure, Uninterruptible Power Supplies (UPS), and photovoltaic inverters. Automotive applications include on-board chargers, inverters and high-voltage DC-DC converters. 

“Wide-bandgap semiconductors like gallium nitride and silicon carbide are now well placed to meet the stringent needs of high-volume applications, bringing the promise of higher efficiency, greater power density, lower system cost and reduced operating costs for original equipment manufacturers,” said Mark Roeloffzen, General Manager at Nexperia. 

Source: Nexperia

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