Microchip Technology is introducing its newly-qualified 700 V and 1,200 V SiC Schottky Barrier Diode (SBD) power devices, providing EV system designers with solutions that meet AEC-Q101 quality standards across a wide range of voltage, current and package options. Microchip says the SBD family’s avalanche performance allows designers to reduce the need for external protection… Read more »

Microchip Technology has expanded its portfolio of silicon carbide (SiC) power modules for high-power system control, gate drive and power stages. Microchip’s SiC family includes Schottky Barrier Diode (SBD)-based power modules in 700, 1,200 and 1,700 volt versions. The new power module family includes various topologies, including dual diode, full-bridge, phase leg, dual common cathode,… Read more »