Microchip Technology has expanded its portfolio of silicon carbide (SiC) power modules for high-power system control, gate drive and power stages. Microchip’s SiC family includes Schottky Barrier Diode (SBD)-based power modules in 700, 1,200 and 1,700 volt versions. The new power module family includes various topologies, including dual diode, full-bridge, phase leg, dual common cathode, and 3-phase bridge, and also offers different current and package options. The modules integrate multiple SiC dies with the option to mix and match substrate and baseplate material into a single module which, according to Microchip, simplifies design, maximizes switching efficiency, reduces heat, and shrinks the system footprint.
The company’s 30 kW 3-Phase Vienna power factor correction, SiC discrete, and SP3/SP6LI module drive reference designs/boards provide tools to help reduce development cycle times. The recently added AgileSwitch family of digital programmable gate drivers further supports accelerating the process of moving from the design stage to production.
“Our focus continues to be delivering reliable and innovative solutions,” said Leon Gross, VP of Microchip’s Discrete Product Group business unit. “From definition to product release, our SiC technology provides superior reliability and ruggedness, helping power system designers to ensure a long application life with no degradation in performance.”