Microchip Technology is collaborating with Mersen on a new 150 kVA 3-phase silicon carbide power stack reference design. Mersen’s current offering provides designers with a compact, high-power silicon carbide system without the need for individual device sourcing, testing and qualification.
The reference design includes Microchip’s SiC power modules and digital gate drivers and Mersen’s busbar, fuses, capacitors and thermal management. With Microchip’s 1,200 V SiC MOSFET and AgileSwitch digital gate driver, the reference design enables engineers to rapidly develop high-voltage systems using kits predesigned for their applications.
The Power Stack Reference Design provides 16 kW/L of power density at up to 130° C, peak efficiency at 98%, and a switching frequency of up to 20 kHz . Using Microchip’s SiC MOSFETs and AgileSwitch digital gate drivers, the reference design enables engineers to select from 700 V and 1,200 V options, and currents up to 750 A. Microchip also provides a choice in module construction, including baseplate material, Direct Bonding Copper (DBC), ceramic material and the die attach method.
Philippe Roussel, Mersen VP, said, “We can demonstrate our ability to optimize inverter topologies from our customers, relying on our line of highly reliable bus bars, capacitors, fuses and cooling systems. The Microchip silicon carbide line-up also gives us the capacity to extend these primary specifications to higher voltage, current and switching frequency to meet every customer’s operating point needs.”
Source: Microchip Technology