Semiconductor provider Transphorm has announced that its third-generation high-voltage gallium nitride (GaN) field-effect transistor (FET) has passed AEC-Q101 stress tests for automotive-grade discrete semiconductors. The transistor targets EV applications including on-board chargers, DC-DC converters, and DC-AC inverter systems.
Transphorm’s new FET, the TP65H035WSQA, performed at 175° C during AEC-Q101 qualification testing, which the company says will give design engineers ample thermal headroom when developing power systems. In addition to AEC-Q101 qualification, the FET is also JEDEC-certified.
“Proving device quality and reliability is perhaps the most critical factor influencing customer confidence in high-voltage GaN FETs – particularly in the automotive and electric vehicle markets,” said Transphorm’s Philip Zuk. “To that end, we ensure that our GaN maintains its performance and reliability even in real-world conditions that may be far harsher than what mission profiles call for. As shown by the published reliability data, our JEDEC-qualified Gen III platform has a Field Failure FIT rate of 3, which is in line with that of silicon carbide. It’s this high reliability level that allowed Transphorm to release a Gen III automotive FET at 175 degrees Celsius.”