Posts Tagged: Transphorm

Transphorm to demonstrate R&D results of its 1,200 V GaN FET for EVs

Gallium Nitride (GaN) semiconductor designer and manufacturer Transphorm plans to demonstrate R&D results from its 1,200 V GaN Field-Effect Transistor (FET) at the upcoming International Symposium on Power Semiconductor Devices and ICs (ISPSD), and expects to have samples available in 2023. Designed for EVs, infrastructure power systems, industrial applications and renewable energy systems, the the… Read more »

Transphorm introduces second 900 V GaN FET for three-phase applications

Transphorm, a provider of Gallium Nitride (GaN) semiconductors, has introduced its second 900 V Field-Effect Transistor (FET), the Gen III TP90H050WS. Transphorm’s devices now enable three-phase industrial systems and higher voltage automotive electronics to use GaN. The FET has a typical on-resistance of 50 mOhm with a 1000 V transient rating, offered in a standard… Read more »

Transphorm’s latest GaN transistor passes automotive qualification

Semiconductor provider Transphorm has announced that its third-generation high-voltage gallium nitride (GaN) field-effect transistor (FET) has passed AEC-Q101 stress tests for automotive-grade discrete semiconductors. The transistor targets EV applications including on-board chargers, DC-DC converters, and DC-AC inverter systems. Transphorm’s new FET, the TP65H035WSQA, performed at 175° C during AEC-Q101 qualification testing, which the company says… Read more »