Posts Tagged: Transphorm

Transphorm introduces second 900 V GaN FET for three-phase applications

Transphorm, a provider of Gallium Nitride (GaN) semiconductors, has introduced its second 900 V Field-Effect Transistor (FET), the Gen III TP90H050WS. Transphorm’s devices now enable three-phase industrial systems and higher voltage automotive electronics to use GaN. The FET has a typical on-resistance of 50 mOhm with a 1000 V transient rating, offered in a standard… Read more »

Transphorm’s latest GaN transistor passes automotive qualification

Semiconductor provider Transphorm has announced that its third-generation high-voltage gallium nitride (GaN) field-effect transistor (FET) has passed AEC-Q101 stress tests for automotive-grade discrete semiconductors. The transistor targets EV applications including on-board chargers, DC-DC converters, and DC-AC inverter systems. Transphorm’s new FET, the TP65H035WSQA, performed at 175° C during AEC-Q101 qualification testing, which the company says… Read more »