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Power Integrations new automotive-qualified silicon diodes for high-switching-speed designs

Power Integrations, a maker of high-voltage integrated circuits for energy-efficient power conversion, has announced its 600 V, 12 A Qspeed diode, the AEC-Q101-qualified QH12TZ600Q. The company says the device’s Qrr of 14 nC at 25° C improves the efficiency of an onboard charger’s PFC stage and reduces the thermals of the PFC MOSFETs. 

Senior Product Marketing Manager Edward Ong said, “The Qrr of these new Qspeed diodes is half that of the next-best ultra-fast silicon diodes, resulting in very high system efficiency. This is particularly important for automotive on-board charger applications that require higher switching frequency to reduce volume and weight, and enables the Qspeed diodes to replace SiC devices.”

The QH12TZ600Q uses merged PiN and Schottky diode technology to achieve high performance. Power Integrations says the device’s reverse recovery current transition characteristics also reduce EMI and peak reverse voltage stress, eliminating the need for snubbers when used as output rectifiers in onboard chargers. Devices are available in the compact, 2.5 kV isolated TO-220 package which enables direct mounting to metal heat sinks.

Source: Power Integrations

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