Integrated circuit manufacturer Power Integrations has unveiled a 900 V gallium-nitride (GaN) addition to its InnoSwitch3 line of flyback switcher ICs. The company says the new ICs deliver up to 100 W with 93% efficiency, eliminating the need for heat sinks and simplifying space-constrained application design. The new 900 V InnoSwitch3-EP and InnoSwitch3-AQ off-line CV/CC… Read more »
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Power Integrations introduces new line of gate-driver boards
Integrated circuit maker Power Integrations has introduced a new line of gate-driver boards designed for electric buses and trucks as well as electric construction and agricultural equipment. The SCALE EV gate-driver boards are rated at 1,200 V for 400 V and 800 V systems. Each is composed of two reinforced gate-drive channels, associated power supplies and… Read more »
Power Integrations offers two new ICs with 1,700 V SiC MOSFET
Integrated-circuit (IC) maker Power Integrations has launched two new AEC-Q100-qualified, 1,700-volt-rated ICs. They are part of the InnoSwitch 3-AQ product line, and are intended for 600- and 800-V EVs and fuel cell cars, electric buses and trucks, and industrial applications such as renewable energy, battery storage, motor drives and metering. According to Power Integrations, the… Read more »
Power Integrations new automotive-qualified silicon diodes for high-switching-speed designs
Power Integrations, a maker of high-voltage integrated circuits for energy-efficient power conversion, has announced its 600 V, 12 A Qspeed diode, the AEC-Q101-qualified QH12TZ600Q. The company says the device’s Qrr of 14 nC at 25° C improves the efficiency of an onboard charger’s PFC stage and reduces the thermals of the PFC MOSFETs. Senior Product… Read more »
Power Integrations’ new AEC-Q100 certified 900 V InnoSwitch3-AQ Flyback Switcher ICs
Power Integrations, a maker of high-voltage power conversion ICs, has announced that its automotive-qualified InnoSwitch3-AQ flyback switcher IC family is now available. One version is rated to 900 V, providing headroom for 400 V and 800 V EV inverter, battery management and climate control applications. The InnoSwitch3-AQ family combines primary and secondary controllers, plus safety-rated… Read more »
Power Integrations releases InnoSwitch3 flyback switcher IC for EVs
Power Integrations has announced the production release of the InnoSwitch3-AQ, an AEC-Q100-qualified flyback switcher with integrated 750 V MOSFET and secondary-side sensing. The newly qualified device family targets EV applications such as traction inverters, OBC (on-board chargers), EMS (energy management DC/DC bus converters) and BMS (battery management systems). The InnoSwitch3-AQ uses the company’s high-speed FluxLink… Read more »
Power Integrations’ SCALE-iDriver for SiC MOSFETs achieves AEC-Q100 automotive qualification
Power Integrations has announced that its SIC118xKQ SCALE-iDriver, a single-channel gate driver for silicon carbide (SiC) MOSFETs, is now certified to AEC-Q100 for automotive use. The drivers, which include safety and protection features, can be configured to support gate-drive voltage requirements of commonly used SiC MOSFETs. The SIC1182KQ (1,200 V) and SIC1181KQ (750 V) SCALE-iDriver… Read more »
Power Integrations launches new SCALE-iDriver gate driver
Power Integrations, a manufacturer of gate-driver technology for medium- and high-voltage inverter applications, has launched a new gate driver for 750 V-rated IGBTs. The new SID1181KQ SCALE-iDriver comes equipped with the company’s FluxLink communications technology and protection features such as desaturation monitoring; primary and secondary Undervoltage Lock-out; and Advanced Soft Shut Down. The SCALE-iDrivers are… Read more »
Power Integrations’ new gate-driver system enables paralleling of up to four SiC power modules
Power Integrations, a manufacturer of gate-driver technology for medium- and high-voltage inverter applications, has introduced the SCALE-iFlex gate-driver system for IGBT, hybrid, and silicon-carbide (SiC) MOSFET power modules with blocking voltages from 1.7 to 4.5 kV. The system consists of a central Isolated Master Control (IMC) and one to four Module-Adapted Gate Drivers (MAGs). The… Read more »
Silicon carbide is becoming the material of choice for EV power electronics
Silicon carbide is a hot topic in the power electronics field these days. As a recent article in the New York Times explains, SiC is a wide-bandgap (WBG) material that designers are increasingly choosing to make power electronics devices more efficient. WBG advantages The WBG classification has profound implications for device behavior and performance. This… Read more »