Power Integrations has announced the production release of the InnoSwitch3-AQ, an AEC-Q100-qualified flyback switcher with integrated 750 V MOSFET and secondary-side sensing. The newly qualified device family targets EV applications such as traction inverters, OBC (on-board chargers), EMS (energy management DC/DC bus converters) and BMS (battery management systems). The InnoSwitch3-AQ uses the company’s high-speed FluxLink… Read more »
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Power Integrations has announced that its SIC118xKQ SCALE-iDriver, a single-channel gate driver for silicon carbide (SiC) MOSFETs, is now certified to AEC-Q100 for automotive use. The drivers, which include safety and protection features, can be configured to support gate-drive voltage requirements of commonly used SiC MOSFETs. The SIC1182KQ (1,200 V) and SIC1181KQ (750 V) SCALE-iDriver… Read more »
Power Integrations, a manufacturer of gate-driver technology for medium- and high-voltage inverter applications, has launched a new gate driver for 750 V-rated IGBTs. The new SID1181KQ SCALE-iDriver comes equipped with the company’s FluxLink communications technology and protection features such as desaturation monitoring; primary and secondary Undervoltage Lock-out; and Advanced Soft Shut Down. The SCALE-iDrivers are… Read more »
Power Integrations, a manufacturer of gate-driver technology for medium- and high-voltage inverter applications, has introduced the SCALE-iFlex gate-driver system for IGBT, hybrid, and silicon-carbide (SiC) MOSFET power modules with blocking voltages from 1.7 to 4.5 kV. The system consists of a central Isolated Master Control (IMC) and one to four Module-Adapted Gate Drivers (MAGs). The… Read more »
In this session, we will review the trends affecting the design of traction inverters, the challenges imposed by the migration towards higher bus voltages, and the need to meet ISO26262 “functional safety”. The changes required to support high-voltage SiC MOSFET switching modules will also be examined. New IC solutions that enable effective and efficient isolated… Read more »