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Infineon to release first 200 mm SiC devices for high-voltage applications

German semiconductor manufacturer Infineon Technologies is set to release the first silicon carbide (SiC) products based on its 200 mm SiC wafer manufacturing technology to customers during the first quarter of 2025.

The products, for high-voltage applications such as EVs, trains and renewable energy, will be manufactured in Villach, Austria.

The transition of Infineon’s manufacturing site in Kulim, Malaysia, from 150 mm wafers to the larger and more efficient 200 mm diameter wafers is on track, the company said. The newly built Module 3 at the site is set to start high-volume production in line with market demand.

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SiC semiconductors can switch electricity more efficiently than traditional silicon devices. They demonstrate high reliability and robustness under extreme conditions and enable smaller designs.

“By ramping up SiC production in Villach and Kulim in phases, we are improving cost-efficiency and continuing to ensure product quality. At the same time, we are making sure our manufacturing capacities can meet the demand for SiC-based power semiconductors,” said Dr. Rutger Wijburg, Chief Operations Officer of Infineon.

Infineon supplies power semiconductors for EVs to automakers such as Hyundai and Kia.

Source: Infineon Technologies

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