Infineon has introduced the H-DPAK, a new package housing an integrated half-bridge built on its 750 V CoolSiC G2 SiC MOSFET technology. The device is designed for power conversion applications in automotive and industrial systems, including single-stage and two-stage on-board chargers, DC-DC converters and EV auxiliaries, as well as HVDC AI server power supplies and battery backup units.

Instead of mounting discrete high-side and low-side switches separately, the H-DPAK puts the complete unidirectional half-bridge in a single package. Infineon says the split lead frame design with optimized drain pads improves heat spreading and reduces parasitic loop inductance—reducing switching noise and ringing at the high dv/dt rates SiC enables.

Package geometry is designed for board-level compatibility. The H-DPAK matches the 2.3 mm height of Infineon’s existing Q-DPAK and TOLT packages, making it a drop-in-compatible option for layouts already built around those footprints. Top-side cooling orientation supports liquid cooling integration in dense power stages without requiring board redesign.

The 750V CoolSiC G2 silicon adds low gate charge for reduced gate drive losses, high dv/dt capability, and wide gate-bias tolerance.

Source: Infineon Technologies