Posts Tagged: Wolfspeed

Cree to build silicon carbide device manufacturing facility in New York

Silicon carbide manufacturer Cree plans to build a new manufacturing facility in Marcy, New York. The fabrication facility for 200 mm power and radio frequency wafers, which will have a footprint of 480,000 square feet upon completion, will help increase capacity for the company’s Wolfspeed SiC and GaN business. The facility is the result of… Read more »

Cree to invest $1 billion to expand silicon carbide capacity

LED and semiconductor manufacturer Cree will invest up to $1 billion to expand its silicon carbide materials capability and wafer fabrication capacity. Slated for completion in 2024, the expansion will entail the development of an automated 200 mm silicon carbide fabrication facility and a materials factory in Durham, North Carolina. The plan includes the buildout… Read more »

Wolfspeed introduces next-gen SiC diode for renewable energy and EV applications

Wolfspeed (a Cree company), has introduced its 5th-generation SiC Schottky diode, which is optimized for renewable energy, industrial power and EV applications. The 1,700 V C5D is commercially available in both bare die and package formats. It joins the current line of 1,700 V MOSFETs, which feature an optimized TO-247-4 Plus package that provides extra… Read more »

Wolfspeed Technology introduces third-gen 1,200 V SiC MOSFET

Only one year after they were first introduced, Cree’s Wolfspeed Technologies has announced its third generation of 1,200 V SiC MOSFETs. Designed for EV powertrain applications, Wolfspeed claims that the MOSFET has the highest figure of merit on the market today, with low drain-source on resistance (RDS) performance and the industry’s lowest switching losses. Samples are currently available… Read more »

Wolfspeed’s new SiC power module is built for harsh environments

Wolfspeed, a specialist in silicon carbide (SiC) power products, has released a new power module that’s designed to withstand high-humidity, high-temperature and high-voltage conditions. The new all-SiC module, rated for 300 A and 1.2 kV blocking, passed a reliability test that subjected it to an environment of 85% relative humidity and 85° C ambient temperature… Read more »

Mersen beats next generation DOE power density targets through Stack Reference designs

150 kVA – 16kW/L SiC power stack for heavy-duty EV Mersen partnered with AgileSwitch and FTCAP to develop two high performance 3-phase inverter power stack reference designs. The SiC MOSFET version uses Wolfspeed SiC modules to deliver 150 kVA at a power density of 16 kVA/l, exceeding the DOE’s 2020 roadmap for electric vehicle applications…. Read more »

Wolfspeed launches a new silicon carbide MOSFET for EV inverters

Wide Bandgap (WBG) semiconductor technologies have attracted a lot of attention and research funding in the past decade. Both public and private institutions around the world have been obsessed with accelerating the evolution of WBG tech into commercial power electronics applications. What’s all the fuss about? WBG materials such as silicon carbide (SiC) and gallium… Read more »

Wolfspeed expands MOSFET platform to 1,200 V

Wolfspeed, a pioneer of silicon carbide (SiC) power products, has expanded its C3M platform to include a 1,200 V MOSFET. The new device is designed to enable an increase in frequency while maintaining efficiency, lowering system cost, reducing circuit EMI, and enabling 99% efficiency levels in three-phase power factor correction circuits. The device uses Wolfspeed’s… Read more »

Wolfspeed’s new 1,000 V silicon carbide MOSFET reduces cost and size, improves efficiency

Wolfspeed, a specialist in silicon carbide (SiC) power products, has introduced a 1,000 V MOSFET that’s designed to reduce overall system cost, while improving efficiency and decreasing size. Wolfspeed says the new MOSFET, which is optimized for fast charging and industrial power supplies, enables a 30 percent reduction in component count, a 3x increase in… Read more »