Only one year after they were first introduced, Cree’s Wolfspeed Technologies has announced its third generation of 1,200 V SiC MOSFETs. Designed for EV powertrain applications, Wolfspeed claims that the MOSFET has the highest figure of merit on the market today, with low drain-source on resistance (RDS) performance and the industry’s lowest switching losses. Samples are currently available to select customers, and the MOSFET will be released for full distribution later this year. Wolfspeed will showcase the MOSFETs in this year’s PCIM.
“There is a growing global demand for more electric vehicles on the road, with nearly all vehicle manufacturers announcing new electric platforms across their fleets,” says Cree CEO Gregg Lowe. “Cree is at the forefront of enabling this dramatic change in the automotive industry with new technologies, such as Wolfspeed’s new silicon carbide MOSFET portfolio, that help foster the adoption of electric vehicles.”