Cree to build silicon carbide device manufacturing facility in New York

Silicon carbide manufacturer Cree plans to build a new manufacturing facility in Marcy, New York. The fabrication facility for 200 mm power and radio frequency wafers, which will have a footprint of 480,000 square feet upon completion, will help increase capacity for the company’s Wolfspeed SiC and GaN business.

The facility is the result of a partnership between Cree, the office of Governor Andrew M. Cuomo, and other state and local agencies and entities. Cree will invest around $1 billion in construction, equipment and other related costs. New York state will provide a $500-million grant.

Cree CEO Gregg Lowe said, “Silicon carbide is one of the most pivotal technologies of our time, and is at the heart of enabling innovation across a wide range of today’s most groundbreaking and revolutionary markets, including the transition from the internal combustion engine to electric vehicles and the rollout of ultra-fast 5G networks. This state-of-the-art, automotive-qualified wafer fabrication facility builds on our 30-year heritage of commercializing breakthrough technologies that help our customers deliver next-generation applications.”

Source: Cree