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Posts Tagged: Qorvo (formerly UnitedSiC)

Qorvo says its new SiC FET product line has best-in-class figures of merit for on-resistance

Radio frequency technology company Qorvo (formerly UnitedSiC) has announced a new SiC Field Effect Transistor (FET) product line, which it says has best-in-class figures of merit for on-resistance. The FET is designed for the 800 V bus architectures in the onboard chargers of EVs as well as industrial battery chargers, industrial power supplies, DC/DC solar… Read more »

UnitedSiC launches new version of FET-jet component selection tool

UnitedSiC has launched version 2 of its FET-jet calculator, a tool used to select Schottky diodes and field-effect transistors (FETs). The user selects the topology of the desired AC-DC or DC-DC converter, isolated or non-isolated. Changing between continuous, critical, or discontinuous modes is automatic. The input, output, and power required are selected, and the tool then… Read more »

UnitedSiC announces SiC FETs with RDS(on) of less than 10 mohms

Range and horsepower may get the headlines, but to powertrain designers, drain-source resistance, also known as RDS(on), is a sexy spec. Those in the know are excited over the news that UnitedSiC, a New Jersey-based manufacturer of silicon carbide (SiC) power semiconductors, is introducing four new SiC field-effect transistors (FETs) that boast RDS(on) levels of… Read more »