Netherlands-based global semiconductor company Nexperia has introduced push-pull transformer drivers that provide 6 W of power delivery at up to 90% efficiency in a small, SOT package for a range of automotive applications like traction inverters and motor control, DC-DC converters, battery management systems and on-board chargers. The NXF6501-Q100, NXF6505A-Q100, and NXF6505B-Q100 are AEC-Q100 qualified… Read more »
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Nexperia offers automotive qualified small-signal compact MOSFETs
Dutch semiconductor manufacturer Nexperia has released new single and dual small-signal MOSFETs in miniature DFN packages. The automotive-qualified devices are available in DFN1110D-3 and DFN1412-6 packages. The 1.1 mm x 1 mm DFN1110D-3 package is quickly becoming the industry standard package for small-signal MOSFETs and bipolar transistors for automotive applications. DFN1110D-3 and DFN1412-6 are leadless… Read more »
Nexperia to invest $200 million at its semiconductor factory in Germany
Dutch semiconductor manufacturer Nexperia plans to invest $200 million to develop the next generation of wide bandgap (WBG) silicon carbide (SiC) and gallium nitride (GaN) semiconductors and to build production infrastructure at its facility in Hamburg, Germany. Wafer fab capacity for silicon (Si) diodes and transistors will also be increased. SiC and GaN semiconductors enable… Read more »
Nexperia’s 650 V SiC diodes qualify for automotive use
Netherlands-based Nexperia’s 650 V, 10 A silicon carbide (SiC) Schottky diode is now automotive-qualified (PSC1065H-Q) and available in real-two-pin (R2P) DPAK (TO-252-2) packaging, making it suitable for various applications in EVs and other automobiles. The diode is designed to address the challenges of demanding high voltage and high current applications including switched-mode power supplies, AC-DC and DC-DC… Read more »
Nexperia’s new silicon carbide Schottky diodes have 650 V peak reverse voltage
Nexperia has released its first SiC Schottky diode, which boasts a 650 V repetitive peak reverse voltage and 10 A continuous forward current . Nexperia plans to expand its portfolio of SiC diodes, leading to a total of 72 products operating at voltage levels of 650 V and 1,200 V, with currents in the range… Read more »
Nexperia acquires Newport Wafer Fab
Semiconductors have been enjoying an unaccustomed turn in the media spotlight since the recent shortage that forced many automakers to slow or suspend production. The latest news on the semiconductor scene is that Nexperia, an expert in the high-volume production of essential semiconductors, has acquired Newport Wafer Fab, which operates a semiconductor production facility in… Read more »
Nexperia’s new 40 V MOSFETs for automotive and industrial applications
Nexperia has announced new 0.55 mΩ RDS(on) 40 V power MOSFETs in the LFPAK88 package for automotive (BUK7S0R5-40H) and industrial (PSMNR55-40SSH) applications. The company says the devices are the lowest RDS(on) 40 V parts it has ever produced. They deliver higher power densities than traditional D2PAK devices and offer improved performance in both avalanche and… Read more »
Nexperia and UAES partner on gallium nitride power systems
Semiconductor manufacturer Nexperia has announced a partnership with United Automotive Electronic Systems (UAES), a provider of automotive powertrain and body control systems. The program will focus on power systems for EVs, with the aim of jointly developing automotive applications using gallium nitride (GaN) technology. UAES is currently using Nexperia GaN FETs in EV projects such… Read more »
Nexperia extends MOSFET line-up with AEC-Q101-qualified half-bridge package
Nexperia has announced a series of half-bridge (high-side and low-side) automotive MOSFETs constructed in the space-saving LFPAK56D package format. The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications, including motor drives and DC/DC converters. The new package provides a half-bridge solution in one device, and occupies a 30% smaller… Read more »
Nexperia releases 80 V resistor-equipped transistor for 48 V automotive circuits
Nexperia has introduced its 80 V RET (resistor-equipped transistor) family. The company says the new RETs, or “digital transistors,” provide enough headroom for use in 48 V automotive circuits. RETs save space and reduce manufacturing costs by combining the bias resistor and bias-emitter resistor in the same SOT23 (250 mW Ptot) or SOT323 (235 mW… Read more »