Search Results Found For: "nexperia"

Nexperia and UAES partner on gallium nitride power systems

Semiconductor manufacturer Nexperia has announced a partnership with United Automotive Electronic Systems (UAES), a provider of automotive powertrain and body control systems. The program will focus on power systems for EVs, with the aim of jointly developing automotive applications using gallium nitride (GaN) technology. UAES is currently using Nexperia GaN FETs in EV projects such… Read more »

Nexperia extends MOSFET line-up with AEC-Q101-qualified half-bridge package

Nexperia has announced a series of half-bridge (high-side and low-side) automotive MOSFETs constructed in the space-saving LFPAK56D package format. The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications, including motor drives and DC/DC converters. The new package provides a half-bridge solution in one device, and occupies a 30% smaller… Read more »

Nexperia releases 80 V resistor-equipped transistor for 48 V automotive circuits

Nexperia has introduced its 80 V RET (resistor-equipped transistor) family. The company says the new RETs, or “digital transistors,” provide enough headroom for use in 48 V automotive circuits. RETs save space and reduce manufacturing costs by combining the bias resistor and bias-emitter resistor in the same SOT23 (250 mW Ptot) or SOT323 (235 mW… Read more »

Nexperia’s new AEC-Q101 MOSFETs tested to 1 billion cycles

Semiconductor manufacturer Nexperia has launched a new AEC-Q101-qualified Repetitive Avalanche Application-Specific FET (ASFET) portfolio focused on powertrain applications. The company says the devices have been tested to 1 billion avalanche cycles, and can be used to control automotive inductive loads such as solenoids and actuators. In addition to providing a faster turn-off time (up to… Read more »

Nexperia launches AEC-Q101-qualified, leadless CAN-FD protection diodes

Semiconductor manufacturer Nexperia has announced new leadless ESD protection devices for CAN-FD applications. Devices are available in leadless packages with side-wettable flanks that enable AOI tools to be used. Fully AEC-Q101-qualified, the PESD2CANFDx series parts are designed to provide ESD and RF performance, and save PCB space. Nexperia says its new DFN1412D-3 and DFN1110D-3 leadless… Read more »

Nexperia’s next-gen 650 V gallium nitride (GaN) technology

Nexperia has announced a new range of GaN FETs featuring next-generation high-voltage GaN HEMT H2 technology. The devices will be available in both TO-247 and the company’s proprietary CCPAK surface-mount packaging. Nexperia says its devices achieve superior switching FOMs and on-state performance with improved stability, and simplify application designs. Because the parts are configured as… Read more »

Nexperia’s new compact automotive power MOSFET package

Nexperia is offering its automotive power MOSFETs in a new thermally-enhanced, loss-free package with a footprint that it says is 80% smaller than industry-standard devices. LFPAK33 MOSFETs enable the infrastructure that powers contemporary automotive subsystems such as radar and ADAS technology. In the industry, pressure is growing to reduce the size of modules in the… Read more »

Challenges and benefits of moving from silicon to GaN in EV power electronics: WEBINAR

As vehicle electrification increases, so does the requirement of power semiconductors to provide highly efficient power conversion at increasingly higher switching frequency. A move from traditional Si to WBG, in particular Power GaN FETs, coupled with Cu clip-bonded package technology instead of traditional wire bonded D2 and TO packages can address the demands of electrification… Read more »