As the power electronics industry shifts from silicon IGBTs to SiC MOSFETs—driven largely by the efficiency demands of EV inverters, onboard chargers and DC fast charging—one persistent headache has been the gate driver. Legacy designs built around optocouplers and opto-emulators typically need significant rework to handle SiC’s faster switching speeds and higher noise immunity requirements.
Infineon’s new EiceDRIVER 1ED301xMC12I family is designed to eliminate that barrier. The isolated gate driver ICs are pin-compatible with existing opto-emulators and optocouplers, allowing them to serve as drop-in replacements in legacy designs while delivering the performance SiC demands.
The family includes three variants—the 1ED3010, 1ED3011 and 1ED3012—supporting Si MOSFETs, IGBTs and SiC MOSFETs respectively. Key specs include up to 6.5 A of output current, CMTI exceeding 300 kV/µs, propagation delay of 40 ns and timing matching below 10 ns. The devices come in a CTI 600 6-pin DSO package with more than 8 mm creepage and clearance, and use a pure PMOS sourcing stage for improved turn-on performance.
Target applications include motor drives, solar inverters, EV chargers and energy storage systems. All three variants are available now, along with an evaluation board (EVAL-1ED3012MC12I-SIC).
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Source: Infineon
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