ROHM Semiconductor has announced its 4th-generation 1,200-volt SiC MOSFETs optimized for EV powertrain systems, including the main drive inverter, as well as power supplies for industrial equipment. ROHM says that the new SiC MOSFETs deliver low ON resistance with high-speed switching performance, contributing to greater miniaturization and lower power consumption in a variety of applications,… Read more »
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VisIC partners with ZF to develop next-gen EV inverters
ZF Friedrichshafen and VisIC Technologies have announced a partnership to create a new generation of EV drivelines. The focus of the joint effort will be on 400-volt driveline applications, covering the largest segment of the EV market. ZF specializes in wide-band-gap semiconductor technology, such as silicon carbide and gallium nitride. Gallium nitride semiconductors are thought… Read more »
Cree’s 650 V SiC MOSFETs designed for onboard EV charging
Cree recently released the Wolfspeed 650 V silicon carbide MOSFET series, designed for the next generation of onboard EV chargers, data centers and renewable energy systems. “Cree is leading the global transition from silicon to silicon carbide, and our new 650 V MOSFET family is the next step in delivering a high-powered solution to a… Read more »
Microchip expands SiC family of power electronics
Microchip Technology has expanded its portfolio of silicon carbide (SiC) power modules for high-power system control, gate drive and power stages. Microchip’s SiC family includes Schottky Barrier Diode (SBD)-based power modules in 700, 1,200 and 1,700 volt versions. The new power module family includes various topologies, including dual diode, full-bridge, phase leg, dual common cathode,… Read more »
Power Integrations’ SCALE-iDriver for SiC MOSFETs achieves AEC-Q100 automotive qualification
Power Integrations has announced that its SIC118xKQ SCALE-iDriver, a single-channel gate driver for silicon carbide (SiC) MOSFETs, is now certified to AEC-Q100 for automotive use. The drivers, which include safety and protection features, can be configured to support gate-drive voltage requirements of commonly used SiC MOSFETs. The SIC1182KQ (1,200 V) and SIC1181KQ (750 V) SCALE-iDriver… Read more »
USABC grants Physical Sciences $919,000 contract for Li-ion material coating assessment
The United States Advanced Battery Consortium (USABC) recently granted a $919,000 contract to Physical Sciences Inc. (PSI) to assess active coating material in order to verify whether this technology actually improves Li-ion cell-level energy density and lowers costs. The 18-month-long project, which began last year, will evaluate PSI cells to determine whether the company’s active… Read more »
UnitedSiC announces SiC FETs with RDS(on) of less than 10 mohms
Range and horsepower may get the headlines, but to powertrain designers, drain-source resistance, also known as RDS(on), is a sexy spec. Those in the know are excited over the news that UnitedSiC, a New Jersey-based manufacturer of silicon carbide (SiC) power semiconductors, is introducing four new SiC field-effect transistors (FETs) that boast RDS(on) levels of… Read more »
Cree to supply SiC semiconductors to ZF for electric drives
Cree, a US maker of silicon carbide (SiC) semiconductors, has partnered with German parts supplier ZF Friedrichshafen to supply SiC semiconductors for electric drives. ZF will initially use Cree’s technology to fulfill pre-existing orders from several auto manufacturers for silicon carbide-based electric drives, but ZF hopes to make silicon carbide electric drivelines available to the… Read more »
Whimsical signs point drivers to Swedish charging stations
Public charging stations are proliferating around the world, but many drivers are unaware of them. Curious consumers often cite a lack of charging infrastructure as one of the top objections to buying an EV. A Swedish charging network operator believes a lack of signage could be part of the problem – there are more than… Read more »
Infineon’s new EasyPACK modules with CoolSiC MOSFETs designed for charging stations
Semiconductor manufacturer Infineon Technologies has launched two new 1,200 V EasyPACK modules with SiC MOSFETs as part of its 1,200 V series. Infineon says the new product is designed to meet the growing demand for silicon carbide (SiC) solutions. Both the Easy 1B and Easy 2B integrate Infineon’s CoolSiC MOSFETs and are aimed at both… Read more »