Fraunhofer IZM has developed a 500-kW inverter that fits in a volume of 1 liter—500 kVA per liter—with peak efficiency exceeding 99%. The unit was built for Mitsubishi Heavy Industries and is designed for 800 V DC drives, delivering 500 A RMS per phase with an effective inductance of approximately 1 nanohenry and switching speeds… Read more »
Search Results Found For: "SIC"
ROHM’s new 5th-gen EcoSiC devices cuts SiC MOSFET on-resistance 30%
ROHM has developed its 5th Generation SiC MOSFETs under the EcoSiC brand, delivering approximately 30% lower ON resistance during high-temperature operation compared to its 4th Generation devices. The comparison is at Tj=175°C with equivalent breakdown voltage and chip size—meaning the reduction comes from structural enhancements and manufacturing process optimization, not geometry scaling. Lower on-resistance at… Read more »
Peak Nano and Advanced Conversion partner on DC-link capacitors for 800 V+ SiC EV inverters
Peak Nano and Advanced Conversion have announced a partnership to co-develop DC-link capacitor solutions engineered specifically for 800 V+ SiC inverter systems in electric vehicles and e-mobility platforms. Advanced Conversion is a wholly owned subsidiary of ETI, based in Clearwater, Florida. The collaboration pairs Peak Nano’s NanoPlex LDF (Low Dissipation Factor) capacitor film with Advanced… Read more »
SemiQ’s 1200 V QSiC Dual3 half-bridge modules reach 240 W/in³ for ESS converters, AI cooling
SemiQ has introduced its QSiC Dual3 family of 1200 V half-bridge SiC MOSFET modules for applications including motor drives in data center cooling systems, grid converters in energy storage systems and industrial drives. The new lineup includes six modules in a 62 mm x 152 mm S4B1 half-bridge package, with on-resistance options of 1 mΩ,… Read more »
Microchip’s BZPACK mSiC power modules target harsh environments with >1,000-hour HV-H3TRB performance
Microchip Technology has introduced its BZPACK mSiC power modules, a new silicon carbide module family aimed at industrial and renewable-energy systems that have to survive heat, humidity, and high voltage over long operating lives. The key selling point is environmental robustness. Microchip says the modules are tested to meet High Humidity High Voltage High Temperature… Battery Technology, Circuit Protection, Contactors & Fuses, Electric Motor Design & Manufacturing, Manufacturing, OEM News, Semiconductor & Chips, Thermal Management
Unlocking Next-Gen xEV Power Conversion: New CoolSiC™ Devices
Join this webinar to gain valuable insights on the latest power conversion trend, topologies evolution, application requirements and the latest CoolSiC™ AEC-Q qualified products from Infineon. Additionally, you will understand how new innovative CoolSiC™ power devices will revolutionize the automotive industry by enabling cost-effective single-stage Onboard Chargers (OBCs). Presented by: Torsten Klemmer, Application Director xEV… Read more »
Webinar: Unlocking Next-Gen xEV Power Conversion: New CoolSiC™ Devices
Join this webinar at next week’s Virtual Conference on EV Engineering, presented by Infineon, to gain valuable insights on the latest power conversion trend, topologies evolution, application requirements and the latest CoolSiC™ AEC-Q qualified products from Infineon. Additionally, you will understand how new innovative CoolSiC™ power devices will revolutionize the automotive industry by enabling cost-effective… Read more »
NoMIS Power launches 3.3 kV, 1.7 kV SiC MOSFETs for medium-voltage converters
NoMIS Power has released two new medium-voltage silicon carbide MOSFETs, including its first 1.7 kV device, targeting applications such as grid infrastructure, rail and heavy-duty electrification, industrial drives and marine systems. The new parts are the N3PT035MP330K (3.3 kV, 35 mΩ, 88 A) and the N3PT100MP170K (1.7 kV, 100 mΩ, 24 A). Both can be… Read more »
Navitas unveils 5th-generation SiC MOSFET platform with 35% improved switching figure of merit
Navitas Semiconductor has launched its 5th-generation GeneSiC technology platform, a 1200 V SiC MOSFET line based on what the company calls Trench-Assisted Planar (TAP) architecture. The design combines the ruggedness of a planar gate structure with the performance benefits of a trench in the source region. The headline improvement is a 35% better RDS(on) x… Read more »
Infineon launches isolated gate driver ICs with opto-emulator input for SiC migration
As the power electronics industry shifts from silicon IGBTs to SiC MOSFETs—driven largely by the efficiency demands of EV inverters, onboard chargers and DC fast charging—one persistent headache has been the gate driver. Legacy designs built around optocouplers and opto-emulators typically need significant rework to handle SiC’s faster switching speeds and higher noise immunity requirements…. Read more »