Wolfspeed, a pioneer of silicon carbide (SiC) power products, has expanded its C3M platform to include a 1,200 V MOSFET. The new device is designed to enable an increase in frequency while maintaining efficiency, lowering system cost, reducing circuit EMI, and enabling 99% efficiency levels in three-phase power factor correction circuits.
The device uses Wolfspeed’s third-generation C3M planar MOSFET technology, and features low on-resistance (75 mΩ) combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.
Designers can reduce component count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by improved switching performance, says Wolfspeed. These higher-voltage SiC MOSFETs solve many of the limitations of silicon super-junction MOSFETs that make them impractical to use in two-level topologies.
“We are very encouraged about the new SiC products being introduced in new innovative discrete packaging,” said Kurt Goepfrich, a Siemens hardware architect. “These new package options, such as the surface-mount 7L D2PAK, allow us to explore new topologies not possible with existing products.”
“SiC MOSFETs have proven to be beneficial for many high-power applications connected to a battery simply due to the improved efficiency.” explains John Palmour, Wolfspeed’s CTO. “In the case where power is bidirectional, such as grid-connected AC-DC, the potential cost savings are significantly increased due to the reduction in the size of the input filter.”
The new MOSFET is currently available from distributors in a through-hole, 4L TO247 package. A surface-mount version will be released in the coming weeks. Both versions include a Kelvin-source pin to help minimize gate-ringing and reduce system losses.