Nexperia’s next-gen 650 V gallium nitride (GaN) technology

Nexperia has announced a new range of GaN FETs featuring next-generation high-voltage GaN HEMT H2 technology. The devices will be available in both TO-247 and the company’s proprietary CCPAK surface-mount packaging. Nexperia says its devices achieve superior switching FOMs and on-state performance with improved stability, and simplify application designs. Because the parts are configured as cascode devices, they can be driven by standard Si MOSFET drivers. Both versions meet the demands of AEC-Q101 for automotive applications.

The new GaN technology employs through-epi vias, reducing defects and shrinking die size by around 24%. RDS(on) is reduced to 41 mΩ (maximum, 35 mΩ typical at 25° C) in the TO-247 package, with high threshold voltage and low diode forward voltage. RDS(on) will be 39 mΩ (maximum, 33 mΩ typical at 25° C) with CCPAK surface-mount versions. 

Dilder Chowdhury, Nexperia’s GaN Strategic Marketing Director, said, “Customers need a highly-efficient, cost-effective solution for high power conversion at 650 V and around the 30-40 mΩ RDS(on), where applications include on-board chargers, DC/DC converters and traction inverters in EVs.”

Nexperia’s CCPAK surface-mount packaging adopts the company’s copper-clip package technology to replace internal bond wires, which Nexperia says reduces parasitic losses, optimizes electrical and thermal performance, and improves reliability. CCPAK GaN FETs are available in top- or bottom-cooled configurations.

650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK are sampling now. More information, including product specs and datasheets, is available at www.nexperia.com/gan-fets

Source: Nexperia