Netherlands-based Nexperia’s 650 V, 10 A silicon carbide (SiC) Schottky diode is now automotive-qualified (PSC1065H-Q) and available in real-two-pin (R2P) DPAK (TO-252-2) packaging, making it suitable for various applications in EVs and other automobiles.

The diode is designed to address the challenges of demanding high voltage and high current applications including switched-mode power supplies, AC-DC and DC-DC converters, battery charging infrastructure, motor drives and uninterruptible power supplies as well as photovoltaic inverters.

The diode’s merged PiN Schottky (MPS) structure makes it robust against surge currents, removing the need for additional protection circuitry. This reduces system complexity and enables hardware designers to achieve higher efficiency with smaller form factors in rugged high-power applications.

Nexperia’s “thin SiC” technology delivers a substrate that is one-third of its original thickness, which reduces the thermal resistance from the junction to the back-side metal. This results in lower operating temperature, higher reliability and device lifetime, higher surge current capability, and lower forward voltage drop, according to the company.

“The superior reverse recovery of these diodes translates to high efficiency in real-world use,” said Katrin Feurle, Senior Director and Head of Product Group SiC Diodes & FETs at Nexperia. “We are particularly excited that this is our first automotive-qualified product, and it is already recognized by major automotive players for its performance and reliability.”

Source: Nexperia