German semiconductor manufacturer Infineon has launched two new 750 V insulated-gate bipolar transistors (IGBTs) designed for discrete traction inverters in automotive applications.

The new 120 amp-rated and 200 amp-rated EDT2 IGBTs are AECQ101-compliant and use the micro-pattern trench-field-stop cell design also found in the company’s EasyPACK 2B EDT2 and HybridPACK. In comparison to the previous generation, the company says the new IGBTs reduce conduction losses by up to 13%. Infineon also says the new IGBTs provide smooth switching.  

Housed in a TO-247PLUS package, the new IGBTs support battery voltages up to 470 V, and are available now.

Source: Infineon