Fairchild launches new discrete and bare die IGBTs for hybrids and EVs

Fairchild

Semiconductor pioneer Fairchild (NASDAQ: FCS) is expanding its portfolio of automotive-grade semiconductor solutions for electrified vehicles with its new discrete and bare die IGBTs and diodes, which are designed to be well-suited for traction inverters.

The new components feature Field Stop Trench IGBT technology and a soft fast recovery diode.

Designers can add IGBTs in parallel to achieve the required system power rating.

The bare die IGBTs can be customized to meet special requirements. Options include changing the gate pad size and location to accommodate different diameters of aluminum wire, resizing the die, and customizing the breakdown voltage and other electrical parameters.

“Our new discrete and bare die IGBTs and diodes are compelling options for automakers and their suppliers that require performance, reliability and flexibility to build the traction inverters best suited to their specific requirements,” said Sergio Fissore, VP of Fairchild’s Automotive Business Unit.

“An additional enhancement to their robustness is extra screening at final testing that addresses the specific needs of traction inverter applications,” explained Fabio Necco, Director of the H/EV product line at Fairchild. “Along with a best-in-class 650 V breakdown voltage, which is 50 V higher than existing solutions, this extra step provides further protection against electrical overstress.”

Fairchild HEV PR Photo4262016

 

Source: Fairchild