US-based power semiconductor company Navitas has developed gallium nitride (GaN) and silicon carbide (SiC) technologies for EVs, motor drives and industrial applications as well as data centers.

The company has released 650 V bidirectional GaNFast ICs and IsoFast high-speed isolated gate drivers for applications including onboard and roadside EV chargers and motor drives.

The high-power GaNSafe ICs have been qualified to the Q100 and Q101 automotive standards and are designed to deliver high power density and efficiency for OBCs and HV-LV DC-DC converter applications.

The latest release of the company’s SiCPAK power modules, which use epoxy-resin potting technology and GeneSiC trench-assisted planar technology is designed to enable five times lower thermal resistance shift for extended system lifetime. Target markets include EV DC fast chargers (DCFC) and industrial motor drives.

Navitas’s new GaNSense Motor Drive ICs offer bidirectional loss-less current sensing, voltage sensing and temperature protection, while its automotive-qualified Gen 3 Fast SiC MOSFETs with “trench-assisted planar” technology deliver cool running, fast switching and robustness to support faster EV charging.

Source: Navitas Semiconductor