US-based silicon carbide (SiC) technology firm Wolfspeed has announced the commercial launch of its 200 mm SiC materials products.

The move is part of the company’s strategy to help the industry transition from silicon to silicon carbide. After initially offering 200 mm SiC to certain customers, the company decided to release the products to the wider market. Wolfspeed is also offering 200 mm SiC epitaxy for immediate qualification, which can be paired with its 200 mm bare wafers for high quality and scalability in next-generation power devices, according to the company.

The improved parametric specifications of the 200 mm SiC bare wafers at 350 µm thickness and enhanced doping and thickness uniformity of the 200 mm epitaxy enable device makers to improve MOSFET yields, accelerate time-to-market, and deliver more competitive solutions in automotive and other applications, the company said.

These product and performance advancements for 200 mm SiC can also be applied to the company’s 150 mm SiC materials products.

“Wolfspeed’s 200 mm SiC wafers are more than an expansion of wafer diameter—it represents a materials innovation that empowers our customers to accelerate their device roadmaps with confidence,” said Dr. Cengiz Balkas, Wolfspeed’s Chief Business Officer. “By delivering quality at scale, Wolfspeed is enabling power electronics manufacturers to meet growing demand for higher-performing, more efficient silicon carbide solutions.”

Source: Wolfspeed