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Wolfspeed introduces new SiC MOSFET for EV drivetrains


Wolfspeed, a Cree Company, has introduced a 900 V, 10 mΩ MOSFET rated for 196 A of continuous drain current at a case temperature of 25° C. According to the company, this device enables the reduction of EV drivetrain inverter losses by 78 percent.

Wolfspeed has already supplied Ford with a full-SiC, 400 A power module designed around the 900 V, 10 mΩ chip.  This module contains four MOSFETs connected in parallel to achieve 2.5 mΩ Rds(on). Wolfspeed engineers have since demonstrated the capability to use these chips to create an 800 A, 1.25 mΩ module.

“With the commercial release of the 900 V 10 mΩ device, electric vehicles can now reap the benefits of SiC in all aspects of their power conversion,” said John Palmour, CTO of Wolfspeed. “With the continued expansion of our Gen3 MOSFET portfolio in new package options, our devices can now support significant efficiency improvements in onboard chargers, offboard chargers, and now EV drivetrains.”

The new 900 V, 10 mΩ MOSFET is now available in bare die, and Wolfspeed expects to release the associated discrete device in a 4L-TO247 package in the coming weeks. This package has a Kelvin-source connection that allows engineers to create designs that maximize the benefits of SiC’s speed and efficiency.


Source: Wolfspeed



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