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SemiQ releases 1,200 V 80 mΩ silicon carbide power switch

Semiconductor supplier SemiQ has released its second-generation silicon carbide power switch, a 1,200 V 80 mΩ SiC MOSFET. The company currently sells SiC rectifiers at 650 V, 1,200 V and 1,700 V. The MOSFET is designed to provide a trade-off of conduction and switching losses, and maintain its efficiency advantage over a wide range of frequencies.

Compared to silicon IGBTs, the company says its MOSFETs switch faster with lower losses, enabling system-level benefits through reduced size, weight and cooling requirements. The devices are now available in a TO-247-3L package, and will also be available in a TO-247-4L package and a series of modules.

Michael Robinson, President of SemiQ, said, “Thanks to those employees, associates, supporters and vendors who have worked tirelessly to build and qualify our initial Gen2 SiC Power MOSFET, which demonstrates the high -quality, optimized performance, and robust reliability that will be characteristic of a SemiQ MOSFET portfolio that is on the way.”

Source: SemiQ

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