onsemi, which produces intelligent power and sensor technologies for automotive and industrial applications, has released its newest 1,200 V EliteSiC silicon carbide (SiC) M3S devices for EV power electronics. The expanded portfolio includes EliteSiC MOSFETs and modules with high switching speeds, enabling 800 V applications including EV on-board charging (OBC), solar inverters and energy storage systems.

New EliteSiC M3S half-bridge power integrated modules (PIMs) with the lowest drain-source ON resistance Rds(on) in a standard F2 package are also in the portfolio. The modules are suitable for DC-AC, AC-DC and DC-DC high-power conversion stages. They allow parallel switches to share current and heat with optimal direct bonded copper designs. 

The PIMs are designed to deliver high power density in energy infrastructure, EV DC fast charging and uninterruptible power supplies. High-power OBCs up to 22 kW and high-voltage-to-low-voltage DC-DC converters can use the automotive-qualified 1,200 V EliteSiC MOSFETs.

“onsemi’s EliteSiC M3S products will allow designers to reduce their application footprint and system cooling requirements,” said Asif Jakwani, GM of the company’s Advanced Power Division. “This helps designers to develop high-power converters with higher levels of efficiency and increased power densities.”

Source: onsemi