Range and horsepower may get the headlines, but to powertrain designers, drain-source resistance, also known as RDS(on), is a sexy spec. Those in the know are excited over the news that UnitedSiC, a New Jersey-based manufacturer of silicon carbide (SiC) power semiconductors, is introducing four new SiC field-effect transistors (FETs) that boast RDS(on) levels of… Read more »
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Cree to supply SiC semiconductors to ZF for electric drives
Cree, a US maker of silicon carbide (SiC) semiconductors, has partnered with German parts supplier ZF Friedrichshafen to supply SiC semiconductors for electric drives. ZF will initially use Cree’s technology to fulfill pre-existing orders from several auto manufacturers for silicon carbide-based electric drives, but ZF hopes to make silicon carbide electric drivelines available to the… Read more »
Whimsical signs point drivers to Swedish charging stations
Public charging stations are proliferating around the world, but many drivers are unaware of them. Curious consumers often cite a lack of charging infrastructure as one of the top objections to buying an EV. A Swedish charging network operator believes a lack of signage could be part of the problem – there are more than… Read more »
Infineon’s new EasyPACK modules with CoolSiC MOSFETs designed for charging stations
Semiconductor manufacturer Infineon Technologies has launched two new 1,200 V EasyPACK modules with SiC MOSFETs as part of its 1,200 V series. Infineon says the new product is designed to meet the growing demand for silicon carbide (SiC) solutions. Both the Easy 1B and Easy 2B integrate Infineon’s CoolSiC MOSFETs and are aimed at both… Read more »
Power Integrations’ new gate-driver system enables paralleling of up to four SiC power modules
Power Integrations, a manufacturer of gate-driver technology for medium- and high-voltage inverter applications, has introduced the SCALE-iFlex gate-driver system for IGBT, hybrid, and silicon-carbide (SiC) MOSFET power modules with blocking voltages from 1.7 to 4.5 kV. The system consists of a central Isolated Master Control (IMC) and one to four Module-Adapted Gate Drivers (MAGs). The… Read more »
SiC vs GaN semiconductors for EV power converters: Tech Opinion
Just as engineers are starting to get used to the advantages (and quirks) of silicon carbide (SiC ) devices, another semiconductor material joins the fray: gallium nitride, or GaN. Though there are some superficial similarities between these two materials, and even some overlap in their areas of best use, it is my opinion that only… Read more »
VisIC publishes reference design for its GaN on-board charger
Israel-based VisIC Technologies, a manufacturer of gallium nitride (GaN) power semiconductor devices for the auto, data center and industrial markets, has published a reference design aimed at the EV industry for its on-board charger (OBC) that uses its GaN technology. The 6.7 kW OBC has a volume of 2.3 liters and weighs 4.5 kg, providing… Read more »
Wolfspeed introduces next-gen SiC diode for renewable energy and EV applications
Wolfspeed (a Cree company), has introduced its 5th-generation SiC Schottky diode, which is optimized for renewable energy, industrial power and EV applications. The 1,700 V C5D is commercially available in both bare die and package formats. It joins the current line of 1,700 V MOSFETs, which feature an optimized TO-247-4 Plus package that provides extra… Read more »
Sumitomo Electric’s new generation of SiC transistors offer low on-state resistance
Sumitomo Electric’s new V-groove superjunction transistors, which it developed through a joint research project with the National Institute of Advanced Industrial Science and Technology (AIST) use silicon carbide (SiC) semiconductors, and the company claims they offer the lowest on-state resistance yet achieved in an SiC transistor. Sumitomo has already developed V-groove MOSFETs that use a… Read more »
ON Semiconductor announces rugged automotive SiC Diodes
ON Semiconductor has introduced a robust line of automotive-grade silicon carbide (SiC) Schottky diodes. The AEC-Q101 diodes can handle high surge currents and are meant to operate from -55° to 175° C. There are several reasons why SiC diodes are ideal for automotive applications. They are smaller and cheaper compared to alternatives, have higher power densities, and create… Read more »