EV Engineering News

Toshiba announces compact low ON-resistance N-Channel MOSFETs

Toshiba has developed a series of high-efficiency N-channel MOSFETs for automotive applications, based on the company’s U-MOSVIII-H process technology. The XPN3R804NC and XPN7R104NC both have 40-volt ratings, while the XPN6R706NC and XPN12006NC support 60-volt operation. They all exhibit low ON-resistance values, as low as 3.8 mΩ (for the XPN3R804NC at 10 volts), plus minimal leakage current.

Housed in surface-mount TSON Advance (WF) packages with a 3.3 mm × 3.6 mm footprint, the MOSFETs can replace 5 mm × 6 mm devices. Wettable flank terminals aid with board mounting procedures and automated optical inspections (AOIs).

The AEC-Q101-compliant MOSFETs are intended for automotive environments, as well as switching regulators, DC-DC converters and motor drivers.

Source: Toshiba

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