Dutch semiconductor designer and manufacturer NXP Semiconductors is collaborating with German automotive and industrial systems supplier ZF Friedrichshafen to produce silicon carbide (SiC) traction inverters for EVs.

The collaboration integrates NXP’s GD316x high-voltage isolated gate drivers into ZF’s 800 V SiC-based traction inverter solutions for EVs. This aim is to extend driving range and reduce the number of charging stops drivers need to make while lowering system level costs for OEMs.

As traction inverters migrate to SiC-based designs, the SiC power devices need to be paired with high-voltage isolated gate drivers to enable higher switching frequency, lower conduction losses, better thermal characteristics and higher robustness at high voltages than the previous generation of silicon-based IGBT and MOSFET power switches.

The GD316x range incorporates several programmable control, diagnostic, monitoring and protection features. Its high level of integration allows a smaller footprint and simplifies system design. The gate drivers are designed to reduce electromagnetic compatibility (EMC) noise while also reducing switching energy losses for increased efficiency. Fast short-circuit protection times of <1 µsec in combination with powerful and programmable gate drive schemes optimize the performance of the SiC power modules, according to NXP.

“The combination of ZF’s expertise in motor control and power electronics with NXP’s GD316x gate driver family enables us to provide our latest SiC-based traction inverters with higher power and volume density, efficiency and differentiation, and provide our customers with significant safety, efficiency, range and performance improvements,” said Dr. Carsten Götte, SVP Electrified Powertrain Technology at ZF.

Source: NXP Semiconductors