Semiconductor provider STMicroelectronics and French research institute Laboratory of Electronics and Information Technologies (Leti) have announced plans to enhance on-board EV chargers with gallium nitride-on-silicon (GaN-on-Si) technology. They plan to have validated engineering samples ready in 2019.
Devices that use gallium nitride can handle higher voltages, frequencies and temperatures than those using conventional materials such as silicon. This makes them well-suited for EV chargers, as well as other high-power applications such as wireless charging, device packaging and servers.
The collaboration between ST and Leti will focus on developing GaN-on-Silicon diode and transistor architectures on 200 mm wafers.
“Leveraging Leti’s 200 mm generic platform, our team is ready to transfer the technology onto ST’s manufacturing line in Tours,” said Leti CEO Emmanuel Sabonnadiere.
ST’s fully-qualified GaN-on-Si manufacturing line in Tours, France will be ready for initial production by 2020.