Gallium nitride power semiconductor developer GaN Systems has signed a comprehensive capacity agreement with BMW for the company’s GaN power transistors, which are designed to increase the efficiency and power density of critical applications in EVs.

GaN Systems will provide capacity for multiple applications in series production. The guaranteed volumes are a building block for reliability in the supply chain for automotive manufacturers. BMW’s relationship with GaN Systems began when BMW’s engineers found that GaN enabled small-size, lightweight, low-cost onboard chargers, DC/DC converters and traction inverters.

“Electric vehicles represent the future of transportation, and we are delighted to continue to support BMW with our design and production capacity,” said Jim Witham, CEO of GaN Systems. “This multi-$100M agreement demonstrates BMW’s commitment to innovation and sustainability.” 

Source: GaN Systems