Power Integrations, a manufacturer of gate-driver technology for medium- and high-voltage inverter applications, has introduced the SCALE-iFlex gate-driver system for IGBT, hybrid, and silicon-carbide (SiC) MOSFET power modules with blocking voltages from 1.7 to 4.5 kV. The system consists of a central Isolated Master Control (IMC) and one to four Module-Adapted Gate Drivers (MAGs). The… Read more »
Search Results Found For: "SIC"
SiC vs GaN semiconductors for EV power converters: Tech Opinion
Just as engineers are starting to get used to the advantages (and quirks) of silicon carbide (SiC ) devices, another semiconductor material joins the fray: gallium nitride, or GaN. Though there are some superficial similarities between these two materials, and even some overlap in their areas of best use, it is my opinion that only… Read more »
VisIC publishes reference design for its GaN on-board charger
Israel-based VisIC Technologies, a manufacturer of gallium nitride (GaN) power semiconductor devices for the auto, data center and industrial markets, has published a reference design aimed at the EV industry for its on-board charger (OBC) that uses its GaN technology. The 6.7 kW OBC has a volume of 2.3 liters and weighs 4.5 kg, providing… Read more »
Wolfspeed introduces next-gen SiC diode for renewable energy and EV applications
Wolfspeed (a Cree company), has introduced its 5th-generation SiC Schottky diode, which is optimized for renewable energy, industrial power and EV applications. The 1,700 V C5D is commercially available in both bare die and package formats. It joins the current line of 1,700 V MOSFETs, which feature an optimized TO-247-4 Plus package that provides extra… Read more »
Sumitomo Electric’s new generation of SiC transistors offer low on-state resistance
Sumitomo Electric’s new V-groove superjunction transistors, which it developed through a joint research project with the National Institute of Advanced Industrial Science and Technology (AIST) use silicon carbide (SiC) semiconductors, and the company claims they offer the lowest on-state resistance yet achieved in an SiC transistor. Sumitomo has already developed V-groove MOSFETs that use a… Read more »
ON Semiconductor announces rugged automotive SiC Diodes
ON Semiconductor has introduced a robust line of automotive-grade silicon carbide (SiC) Schottky diodes. The AEC-Q101 diodes can handle high surge currents and are meant to operate from -55° to 175° C. There are several reasons why SiC diodes are ideal for automotive applications. They are smaller and cheaper compared to alternatives, have higher power densities, and create… Read more »
Wolfspeed Technology introduces third-gen 1,200 V SiC MOSFET
Only one year after they were first introduced, Cree’s Wolfspeed Technologies has announced its third generation of 1,200 V SiC MOSFETs. Designed for EV powertrain applications, Wolfspeed claims that the MOSFET has the highest figure of merit on the market today, with low drain-source on resistance (RDS) performance and the industry’s lowest switching losses. Samples are currently available… Read more »
Infineon introduces new CoolSic Schottky diodes for on-board charger applications
Infineon Technologies’ new CoolSiC diodes are designed for ruggedness and efficiency, to meet the high standards required of hybrid and electric vehicles. Infineon says these diodes are the most durable on the market, due to their high corrosion and humidity resistance. The company will release CoolSiC Diodes in the 650 V class in September. An… Read more »
Littelfuse SiC MOSFET provides fast switching for power electronics
Circuit protection specialist Littelfuse has introduced its first series of silicon carbide (SiC) MOSFETs. In March, Littelfuse made a majority investment in the SiC technology development company Monolith Semiconductor. The LSIC1MO120E0080 Series, with a voltage rating of 1,200 V and ultra-low (80 mΩ) on-resistance, is the first SiC MOSFET to be released by the new… Read more »
Wolfspeed’s new SiC power module is built for harsh environments
Wolfspeed, a specialist in silicon carbide (SiC) power products, has released a new power module that’s designed to withstand high-humidity, high-temperature and high-voltage conditions. The new all-SiC module, rated for 300 A and 1.2 kV blocking, passed a reliability test that subjected it to an environment of 85% relative humidity and 85° C ambient temperature… Read more »