Search Results Found For: "gallium nitride"

hofer’s new 800 V EV inverter to use VisIC gallium nitride chips

Automotive powertrain maker hofer powertrain is using semiconductor manufacturer VisIC Technologies’s gallium nitride chip in its new inverter. hofer powertrain has selected the gallium nitride D3GaN Direct Drive D-Mode chip for its new traction inverter. The high-frequency 3-level inverter is designed for 800 V battery systems in automotive applications. “hofer powertrain’s development paves the way… Read more »

Nexperia and UAES partner on gallium nitride power systems

Semiconductor manufacturer Nexperia has announced a partnership with United Automotive Electronic Systems (UAES), a provider of automotive powertrain and body control systems. The program will focus on power systems for EVs, with the aim of jointly developing automotive applications using gallium nitride (GaN) technology. UAES is currently using Nexperia GaN FETs in EV projects such… Read more »

Nexperia’s next-gen 650 V gallium nitride (GaN) technology

Nexperia has announced a new range of GaN FETs featuring next-generation high-voltage GaN HEMT H2 technology. The devices will be available in both TO-247 and the company’s proprietary CCPAK surface-mount packaging. Nexperia says its devices achieve superior switching FOMs and on-state performance with improved stability, and simplify application designs. Because the parts are configured as… Read more »

STMicroelectronics and Leti to enhance on-board charging with gallium nitride

Semiconductor provider STMicroelectronics and French research institute Laboratory of Electronics and Information Technologies (Leti) have announced plans to enhance on-board EV chargers with gallium nitride-on-silicon (GaN-on-Si) technology. They plan to have validated engineering samples ready in 2019. Devices that use gallium nitride can handle higher voltages, frequencies and temperatures than those using conventional materials such… Read more »

Gallium nitride power diode shows near-ideal performance in all aspects simultaneously

Silicon-based semiconductors are approaching their performance limits, so researchers are investigating materials such as gallium nitride (GaN) as potential replacements. A team of engineers from Cornell, Notre Dame and the semiconductor company IQE has created GaN power diodes capable of serving as the building blocks for future GaN power switches. Alas, GaN is prone to… Read more »

Developer of gallium nitride power switching semiconductors raises $20 million

GaN Systems Inc., a developer of gallium nitride power switching semiconductors, has closed a $20-million Series C financing round. The company will use the new money to ramp up sales and marketing efforts and to continue expanding its manufacturing line. GaN Systems says its Island Technology results in devices that are smaller and more efficient… Read more »

Gallium nitride and silicon carbide expected to displace silicon in power electronics

Emerging materials such as gallium nitride (GaN) and silicon carbide (SiC) will eventually displace silicon in power electronic applications, according to a new report from Lux Research, which forecasts that the market for GaN power electronics will reach $1.1 billion, about 5% of the total market, by 2024. While silicon and SiC (SiC-on-SiC) each come… Read more »

Silicon carbide is becoming the material of choice for EV power electronics

Silicon carbide is a hot topic in the power electronics field these days. As a recent article in the New York Times explains, SiC is a wide-bandgap (WBG) material that designers are increasingly choosing to make power electronics devices more efficient. WBG advantages The WBG classification has profound implications for device behavior and performance. This… Read more »

Wolfspeed opens silicon carbide semiconductor fab facility in New York

Silicon carbide and gallium nitride technology company Wolfspeed has opened a silicon carbide semiconductor wafer fabrication facility in Marcy, New York. Wolfspeed calls the automated facility “the world’s first and largest 200 mm silicon carbide fab, providing uncompromised wafer quality and higher yield.” In April, the facility produced its first batch of silicon carbide semiconductor… Read more »

Beyond Silicon: High Power GaN And SiC Solutions For EVs

Next generation EVs are driving the requirements for semiconductors into higher voltages and currents. This session will cover the semiconductor solutions beyond standard silicon in Silicon Carbide in Gallium Nitride and beyond. Competitive solutions will be examined and compared. Presented by: Tom Wolf, Senior Field Applications Engineer, Nexperia All Sessions: April 2022 Conference