Search Results Found For: "Nexperia"

Application Specific MOSFETs and GaN Solutions for the Automotive Market

This session will discuss the latest Application Specific MOSFETs (ASFETs) designed for emerging automotive applications such as EPS Electric Power Steering, Airbags, Electric Braking Systems and other high power electrical functions in the vehicle. We will also discuss the latest developments in GaN Gallium Nitride with Nexperia’s recent introduction of E-mode Enhanced Mode devices for… Read more »

Next generation dielectric insulation solutions for EV battery packs (Webinar)

As global demand surges for EV battery packs, engineers across the product’s value chain continue to seek new ways to address crucial design challenges. These include choosing materials that provide dielectric insulation. Such choices can significantly impact pack energy density, vehicle reliability and safety. In this session at the Fall Virtual Conference on EV Engineering,… Read more »

Webinar: Power GaN as a technology of choice for volume EV applications

As vehicle electrification increases, so do the requirement for power semiconductors to provide highly efficient power conversion at increasingly higher switching frequency. A move from traditional silicon to wide-band gap, in particular Power GaN FETs, can address the demands of electrification of the powertrain. In this webinar, we will cover how Nexperia addresses one of… Read more »

Beyond Silicon: High Power GaN And SiC Solutions For EVs

Next generation EVs are driving the requirements for semiconductors into higher voltages and currents. This session will cover the semiconductor solutions beyond standard silicon in Silicon Carbide in Gallium Nitride and beyond. Competitive solutions will be examined and compared. Presented by: Tom Wolf, Senior Field Applications Engineer, Nexperia All Sessions: April 2022 Conference

Challenges and benefits of moving from silicon to GaN in EV power electronics: WEBINAR

As vehicle electrification increases, so does the requirement of power semiconductors to provide highly efficient power conversion at increasingly higher switching frequency. A move from traditional Si to WBG, in particular Power GaN FETs, coupled with Cu clip-bonded package technology instead of traditional wire bonded D2 and TO packages can address the demands of electrification… Read more »