This session highlights the key differentiators in Infineon’s SiC technology; Packages and features that enhance the performance reduce the cost and explains the criteria for selection of SiC components for off-board and onboard charging. Presented by: David Levett, Design and Applications Engineer, Industrial Power & Control, Infineon Technologies Shri Joshi, Marketing Director, Industrial Power and… Read more »
Search Results Found For: "MOSFET"
Understanding and solving thermal design issues in MOSFET applications
Sponsored by TTI MOSFETs are the “go to” device for driving motors, solenoids, and other high-power devices. Whenever you work with MOSFETs, heat is always a concern. When selecting a MOSFET, printed circuit board (PCB) designers must understand how much power they will transfer through the MOSFET and the tolerable temperatures. With that information and… Read more »
Nexperia’s new 40 V MOSFETs for automotive and industrial applications
Nexperia has announced new 0.55 mΩ RDS(on) 40 V power MOSFETs in the LFPAK88 package for automotive (BUK7S0R5-40H) and industrial (PSMNR55-40SSH) applications. The company says the devices are the lowest RDS(on) 40 V parts it has ever produced. They deliver higher power densities than traditional D2PAK devices and offer improved performance in both avalanche and… Read more »
SiC MOSFET vs. Si IGBT In Electric Vehicle Applications
In the race to make the most efficient electric vehicle, the design of power electronics converters plays a vital role. Power losses, breakdown voltage, switching times, and thermal conductivity of semiconductor devices are critical factors when designing power electronics converter. Silicon power devices are widely used in power converters but suffer from major limitations such… Read more »
Nexperia extends MOSFET line-up with AEC-Q101-qualified half-bridge package
Nexperia has announced a series of half-bridge (high-side and low-side) automotive MOSFETs constructed in the space-saving LFPAK56D package format. The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications, including motor drives and DC/DC converters. The new package provides a half-bridge solution in one device, and occupies a 30% smaller… Read more »
Nexperia’s new AEC-Q101 MOSFETs tested to 1 billion cycles
Semiconductor manufacturer Nexperia has launched a new AEC-Q101-qualified Repetitive Avalanche Application-Specific FET (ASFET) portfolio focused on powertrain applications. The company says the devices have been tested to 1 billion avalanche cycles, and can be used to control automotive inductive loads such as solenoids and actuators. In addition to providing a faster turn-off time (up to… Read more »
Toshiba announces compact low ON-resistance N-Channel MOSFETs
Toshiba has developed a series of high-efficiency N-channel MOSFETs for automotive applications, based on the company’s U-MOSVIII-H process technology. The XPN3R804NC and XPN7R104NC both have 40-volt ratings, while the XPN6R706NC and XPN12006NC support 60-volt operation. They all exhibit low ON-resistance values, as low as 3.8 mΩ (for the XPN3R804NC at 10 volts), plus minimal leakage… Read more »
ROHM introduces new 4th-generation SiC MOSFETs for EV powertrains
ROHM Semiconductor has announced its 4th-generation 1,200-volt SiC MOSFETs optimized for EV powertrain systems, including the main drive inverter, as well as power supplies for industrial equipment. ROHM says that the new SiC MOSFETs deliver low ON resistance with high-speed switching performance, contributing to greater miniaturization and lower power consumption in a variety of applications,… Read more »