Search Results Found For: "MOSFET"

Nexperia’s new 40 V MOSFETs for automotive and industrial applications

Nexperia has announced new 0.55 mΩ RDS(on) 40 V power MOSFETs in the LFPAK88 package for automotive (BUK7S0R5-40H) and industrial (PSMNR55-40SSH) applications. The company says the devices are the lowest RDS(on) 40 V parts it has ever produced. They deliver higher power densities than traditional D2PAK devices and offer improved performance in both avalanche and… Read more »

SiC MOSFET vs. Si IGBT In Electric Vehicle Applications

In the race to make the most efficient electric vehicle, the design of power electronics converters plays a vital role. Power losses, breakdown voltage, switching times, and thermal conductivity of semiconductor devices are critical factors when designing power electronics converter. Silicon power devices are widely used in power converters but suffer from major limitations such… Read more »

Nexperia extends MOSFET line-up with AEC-Q101-qualified half-bridge package

Nexperia has announced a series of half-bridge (high-side and low-side) automotive MOSFETs constructed in the space-saving LFPAK56D package format. The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications, including motor drives and DC/DC converters. The new package provides a half-bridge solution in one device, and occupies a 30% smaller… Read more »

Nexperia’s new AEC-Q101 MOSFETs tested to 1 billion cycles

Semiconductor manufacturer Nexperia has launched a new AEC-Q101-qualified Repetitive Avalanche Application-Specific FET (ASFET) portfolio focused on powertrain applications. The company says the devices have been tested to 1 billion avalanche cycles, and can be used to control automotive inductive loads such as solenoids and actuators. In addition to providing a faster turn-off time (up to… Read more »

Toshiba announces compact low ON-resistance N-Channel MOSFETs

Toshiba has developed a series of high-efficiency N-channel MOSFETs for automotive applications, based on the company’s U-MOSVIII-H process technology. The XPN3R804NC and XPN7R104NC both have 40-volt ratings, while the XPN6R706NC and XPN12006NC support 60-volt operation. They all exhibit low ON-resistance values, as low as 3.8 mΩ (for the XPN3R804NC at 10 volts), plus minimal leakage… Read more »

ROHM introduces new 4th-generation SiC MOSFETs for EV powertrains

ROHM Semiconductor has announced its 4th-generation 1,200-volt SiC MOSFETs optimized for EV powertrain systems, including the main drive inverter, as well as power supplies for industrial equipment. ROHM says that the new SiC MOSFETs deliver low ON resistance with high-speed switching performance, contributing to greater miniaturization and lower power consumption in a variety of applications,… Read more »

Cree’s 650 V SiC MOSFETs designed for onboard EV charging

Cree recently released the Wolfspeed 650 V silicon carbide MOSFET series, designed for the next generation of onboard EV chargers, data centers and renewable energy systems. “Cree is leading the global transition from silicon to silicon carbide, and our new 650 V MOSFET family is the next step in delivering a high-powered solution to a… Read more »

Power Integrations’ SCALE-iDriver for SiC MOSFETs achieves AEC-Q100 automotive qualification

Power Integrations has announced that its SIC118xKQ SCALE-iDriver, a single-channel gate driver for silicon carbide (SiC) MOSFETs, is now certified to AEC-Q100 for automotive use. The drivers, which include safety and protection features, can be configured to support gate-drive voltage requirements of commonly used SiC MOSFETs. The SIC1182KQ (1,200 V) and SIC1181KQ (750 V) SCALE-iDriver… Read more »