GaN Power Devices For High Reliability EV Applications
Fully demonstrating the robustness of these devices requires looking at all parts of the device and how those elements are related to the different conditions of operation that the devices will be subjected to. Understanding the failure modes is critical to determining the limiting factors for projecting device lifetime. Through this approach, we have investigated the full device with particular focus on regions of concern such as the gate, which is a common concern for all semiconductor devices. The robust nature of the D3GAN will be shown for off-state, on-state and switching, including for the gate region.
Kurt S. Smith , VP of Reliability and Qualification, VISIC TECHNOLOGIES
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