Posts Tagged: Power Electronics

Continental’s new power module is designed for electric SUVs

Automotive supply giant Continental has launched a third-generation power module designed for a broad range of EVs, including electric SUVs and race cars. The new generation delivers six times the performance of the company’s first-generation power electronics and a reduction in weight from 12 kilograms to 8 kilograms. Continental produces its new power electronics using… Read more »

Power Integrations’ new gate-driver system enables paralleling of up to four SiC power modules

Power Integrations, a manufacturer of gate-driver technology for medium- and high-voltage inverter applications, has introduced the SCALE-iFlex gate-driver system for IGBT, hybrid, and silicon-carbide (SiC) MOSFET power modules with blocking voltages from 1.7 to 4.5 kV. The system consists of a central Isolated Master Control (IMC) and one to four Module-Adapted Gate Drivers (MAGs). The… Read more »

Transphorm introduces second 900 V GaN FET for three-phase applications

Transphorm, a provider of Gallium Nitride (GaN) semiconductors, has introduced its second 900 V Field-Effect Transistor (FET), the Gen III TP90H050WS. Transphorm’s devices now enable three-phase industrial systems and higher voltage automotive electronics to use GaN. The FET has a typical on-resistance of 50 mOhm with a 1000 V transient rating, offered in a standard… Read more »

Fujitsu’s new power relay for on-board EV chargers

Fujitsu has launched the FTR-K5, a 6.6 kW relay for on-board EV battery chargers. The FTR-K5 is a 1 Form A printed circuit board relay. It features a 105º C temperature rating and 8 mm insulation distance between coil and contact. The FTR-K5 also features a 5,000 VAC withstand voltage between coil and contact and… Read more »

SiC vs GaN semiconductors for EV power converters: Tech Opinion

Just as engineers are starting to get used to the advantages (and quirks) of silicon carbide (SiC ) devices, another semiconductor material joins the fray: gallium nitride, or GaN. Though there are some superficial similarities between these two materials, and even some overlap in their areas of best use, it is my opinion that only… Read more »

BorgWarner unveils new onboard battery charger

Automotive parts supplier BorgWarner has released a silicon carbide onboard battery charger that is compatible with 400, 600 and 800 V systems. It accepts AC inputs with 7.4 kW, 11 kW, and 22 kW power ratings. Optional DC-to-DC converter rating integration from 2.3 kW to 3.6 kW is available. “Our technical center is dedicated to… Read more »

ROHM introduces 1,200 V IGBTs for compressors and heater circuits

Electronic parts maker ROHM has announced four new automotive-grade 1,200 V-rated insulated-gate bipolar transistors (IGBTs) for inverters used in electronics compressors and for switching circuits used in positive temperature coefficient (PTC) heaters. The IGBTs feature a short-circuit resistance of 10 μsec (Tj=25° C). ROHM says the devices’ unique structure reduces VCE(sat) to 1.70 V, which… Read more »

Fraunhofer develops GaN power ICs with integrated sensors

Researchers from the Fraunhofer Institute have integrated current and temperature sensors, 600 V-class power transistors, freewheeling diodes, and gate drivers onto a gallium nitride (GaN)-based semiconductor chip. The new circuit measures 4 x 3 mm and enables high switching frequencies and a high power density, while providing fast and accurate condition monitoring, according to the… Read more »

A closer look at the losses in power semiconductors

A previous article examined loss mechanisms in traction motors, which tend to be the single biggest source of losses in a modern EV drivetrain. This time, the focus is on the various power semiconductors, as they are the next biggest source of losses. Also covered in brief are ways to mitigate these losses and design… Read more »