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Challenges and benefits of moving from silicon to GaN in EV power electronics: WEBINAR

As vehicle electrification increases, so does the requirement of power semiconductors to provide highly efficient power conversion at increasingly higher switching frequency. A move from traditional Si to WBG, in particular Power GaN FETs, coupled with Cu clip-bonded package technology instead of traditional wire bonded D2 and TO packages can address the demands of electrification… Read more »